Band-gap control of GaInP using Sb as a surfactant

Citation
Jk. Shurtleff et al., Band-gap control of GaInP using Sb as a surfactant, APPL PHYS L, 75(13), 1999, pp. 1914-1916
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
75
Issue
13
Year of publication
1999
Pages
1914 - 1916
Database
ISI
SICI code
0003-6951(19990927)75:13<1914:BCOGUS>2.0.ZU;2-G
Abstract
The use of surfactants to control specific aspects of the vapor-phase epita xial growth process is beginning to be studied for both the elemental and I II/V semiconductors. To date, most reported surfactant effects for semicond uctors relate to the morphology of the growing films. However, semiconducto r alloys with CuPt ordering exhibit much more dramatic effects. The change in the CuPt order parameter induced by the surfactant translates into a mar ked change in the band-gap energy. Previous work concentrated on the effect s of the donor tellurium. Te is less than ideal as a surfactant, since the change in band-gap energy is coupled to a large change in the conductivity. This letter presents the results of a study of the effects of an isoelectr onic surfactant on the ordering process in GaInP. Sb has been found to act as a surfactant during organometallic vapor-phase epitaxial growth. At an e stimated Sb concentration in the solid of 1 x 10(-4), order is eliminated, as indicated by the band-gap energy. Surface photoabsorption (SPA) data ind icate that the effect is due to a change in the surface reconstruction. Add ing Sb leads to attenuation of the peak at 400 nm in the SPA spectrum assoc iated with [(1) over bar 10] P dimers. The addition of Sb during the growth cycle has been used to produce a heterostructure with a 135 meV band-gap d ifference between two layers with the same solid composition. (C) 1999 Amer ican Institute of Physics. [S0003-6951(99)03539-1].