Thermally activated reorientation of di-interstitial defects in silicon

Citation
J. Kim et al., Thermally activated reorientation of di-interstitial defects in silicon, PHYS REV L, 83(10), 1999, pp. 1990-1993
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
PHYSICAL REVIEW LETTERS
ISSN journal
0031-9007 → ACNP
Volume
83
Issue
10
Year of publication
1999
Pages
1990 - 1993
Database
ISI
SICI code
0031-9007(19990906)83:10<1990:TARODD>2.0.ZU;2-7
Abstract
We propose a di-interstitial model for the P6 center commonly observed in i on-implanted silicon. The di-interstitial structure and transition paths be tween different defect orientations can explain the thermally activated tra nsition of the P6 center from low-temperature C-1h to room-temperature D-2d symmetry. The activation energy for the defect reorientation determined by ab initio calculations is 0.5 eV, in agreement with the experiment. Our di -interstitial model establishes a link between point defects and {311} defe cts, supporting the growth model by interstitial nucleations.