Cathodoluminescence and photoluminescence of amorphous silicon oxynitride

Citation
Va. Gritsenko et al., Cathodoluminescence and photoluminescence of amorphous silicon oxynitride, MICROEL REL, 39(5), 1999, pp. 715-718
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS RELIABILITY
ISSN journal
0026-2714 → ACNP
Volume
39
Issue
5
Year of publication
1999
Pages
715 - 718
Database
ISI
SICI code
0026-2714(199905)39:5<715:CAPOAS>2.0.ZU;2-8
Abstract
The cathodoluminescence and photoluminescence of amorphous silicon oxynitri de (a-SiOxNy) films with different compositions were measured for the first time in the near infrared to visible-ultraviolet range. The red band with energy at 1.8-1.9 eV, blue band with energy 2.7 eV, ultraviolet bands with energies 3.1, 3.4-3.6, 4.4-4.7, and 5.4 eV were observed in a-SiOxNy. The 1 .8-1.9 eV band is attributed to the oxygen and nitrogen atoms with unpaired electrons and the 2.7 eV band is attributed to twofold coordinated silicon atoms with two electrons. The 5.4 eV shoulder is due to the peroxy radical s and other ultraviolet bands are supposed to be due to the Si-Si bonds. (C ) 1999 Elsevier Science Ltd. All rights reserved.