Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density

Citation
V. Dmitriev et al., Large area silicon carbide devices fabricated on SiC wafers with reduced micropipe density, MAT SCI E B, 61-2, 1999, pp. 446-449
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY
ISSN journal
0921-5107 → ACNP
Volume
61-2
Year of publication
1999
Pages
446 - 449
Database
ISI
SICI code
0921-5107(19990730)61-2:<446:LASCDF>2.0.ZU;2-6
Abstract
Silicon carbide devices are being developed for high-power applications. Hi gh current operation of these devices is limited by substrate quality. In S iC substrates, micropipes (sometime referred to as micro pores) are a commo n defect. The presence of even a single micropipe defect intersecting the a ctive region of the device has been shown to produce pre-mature electric br eakdown. As a result, the active area of SiC devices usually does not excee d 1 mm(2). In order to fabricate high-power SiC devices, operating at curre nts of 100 A and higher? the device area must exceed 10 mm(2) (using reason able values of current density possible in SIG). Recently, we reported on t he fabrication of silicon carbide epitaxial wafers with reduced micropipe d ensity (Rendakova et al., J. Electron Mater. 27 (1998) 292). The best R&D w afers 35 mm and 41 mm in diameter, both 6H and 4H polytypes, have no microp ipes. We proposed these wafers as substrates for SiC high-power devices (Ch elnokov et al., Diamond and Related Mater. 6 (1997) 1480-1484). In this pap er, we report on the fabrication of large area Schottky barriers (up to 8 m m(2)) based on 4H-SiC layers grown on SIC wafers with reduced micropipe den sity. Schottky barriers produced on this material demonstrate that large de vices can be fabricated without the usual degradation associated with the p resence of micropipes. (C) 1999 Elsevier Science S.A. All rights reserved.