Growth defects in flux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography

Citation
Xb. Hu et al., Growth defects in flux grown RbTiOAsO4 crystals observed with white-beam synchrotron radiation topography, J CRYST GR, 205(3), 1999, pp. 323-327
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
205
Issue
3
Year of publication
1999
Pages
323 - 327
Database
ISI
SICI code
0022-0248(199908)205:3<323:GDIFGR>2.0.ZU;2-S
Abstract
The growth defects in flux grown RbTiOAsO4 crystal have been investigated b y white-beam synchrotron radiation topography. It is found that growth sect or boundaries are the primary growth defects and they show strong X-ray kin ematical contrast in the topograph. All the dislocations are growth induced and appear only in the near capping region. The area away from the capping region is nearly dislocation free. Growth bands show weak contrast in the X-ray topograph. which implies that the impurity contents are relatively lo w in various growth sectors and each growth sector is uniform in compositio n. (C) 1999 Elsevier Science B.V. All rights reserved.