Resonant-tunneling diodes with emitter prewells

Citation
Tb. Boykin et al., Resonant-tunneling diodes with emitter prewells, APPL PHYS L, 75(9), 1999, pp. 1302-1304
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
75
Issue
9
Year of publication
1999
Pages
1302 - 1304
Database
ISI
SICI code
0003-6951(19990830)75:9<1302:RDWEP>2.0.ZU;2-Y
Abstract
Resonant-tunneling diodes (RTDs) incorporating an emitter prewell structure are studied both theoretically and experimentally in order to investigate the utility of the emitter region as a device design parameter. The experim ents show a tendency for peak bias, current, and the peak-to-valley ratio t o increase for wider prewells, behavior likewise seen in both very simple a nd detailed calculations. Both the simple and more complete models point to interactions between states associated with the prewell and the main quant um well as the reasons for the increase in peak current. These results sugg est design guidelines to affect peak bias, current, or the peak-to-valley r atio of RTDs. (C) 1999 American Institute of Physics. [S0003-6951(99)01435- 7].