Simulation of mesa structures for III-V semiconductors under ion beam etching

Citation
L. Houlet et al., Simulation of mesa structures for III-V semiconductors under ion beam etching, EPJ-APPL PH, 6(3), 1999, pp. 273-280
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
EUROPEAN PHYSICAL JOURNAL-APPLIED PHYSICS
ISSN journal
1286-0042 → ACNP
Volume
6
Issue
3
Year of publication
1999
Pages
273 - 280
Database
ISI
SICI code
1286-0042(199906)6:3<273:SOMSFI>2.0.ZU;2-S
Abstract
An argon Ion Beam Etching (IBE) simulation model has been developed to inve stigate the mesa profile evolution in III-V semiconductors' technology. Par ticular attention has been focused on the sputtering yield angular dependen ce effect, on the influence of the material and 2D-morphology of the mask o nto the pattern transfer. Experimental sputtering yield versus ion incidenc e angle is injected into the simulation model. The equations which govern t he surface evolution, stem from the current method of characteristics. The simulated profiles show that the trenching phenomenon can appear by only co nsidering the variation of the sputtering yield versus the etched surface c anting. This is obtained when neither the ion reflection nor the electric f ield line deviation are taken into account. On the other hand, the slope tr ansfer from the mask to the GaAs and InP substrates is studied.