Ion beam induced luminescence maps in CVD diamond as obtained by coincidence measurements

Citation
C. Manfredotti et al., Ion beam induced luminescence maps in CVD diamond as obtained by coincidence measurements, DIAM RELAT, 8(8-9), 1999, pp. 1592-1596
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
8
Issue
8-9
Year of publication
1999
Pages
1592 - 1596
Database
ISI
SICI code
0925-9635(199908)8:8-9<1592:IBILMI>2.0.ZU;2-7
Abstract
A new theory is presented concerning both IBIC (ion beam induced charge) an d IBIL (ion beam induced luminescence) as obtained by a few MeV ion microbe am of a few micrometers spot size. The theory evidences the fact that IBIL depends on the ratio between the total carrier lifetime and the radiative r ecombination lifetime. The IBIL/IBIC maps, as obtained by dividing the two average signals pixel by pixel, depend only on radiative lifetime. IBIL map s, as obtained by coincidence measurements in order to avoid electric noise and display regions of low luminescence, compared with IBIC maps, indicate for the first time that regions of long collection length and regions of s trong radiative recombination are the most important in CVD diamond. In con clusion, recombination in CVD diamond seems to be mainly radiative. (C) 199 9 Elsevier Science S.A. All rights reserved.