Deep level spectroscopy in homoepitaxial diamond films studied from current transients in Schottky junctions

Citation
P. Muret et al., Deep level spectroscopy in homoepitaxial diamond films studied from current transients in Schottky junctions, PHYS ST S-A, 174(1), 1999, pp. 129-135
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH
ISSN journal
0031-8965 → ACNP
Volume
174
Issue
1
Year of publication
1999
Pages
129 - 135
Database
ISI
SICI code
0031-8965(199907)174:1<129:DLSIHD>2.0.ZU;2-M
Abstract
The electrical response of Schottky junctions made on boron doped homoepita xial diamond films is investigated. Current transients due to the release o f holes in the valence band from deep level traps are detected and analysed . The homoepitaxial layers grown by microwave plasma decomposition of a ver y small percentage of B2H6 mixed with CH4 in hydrogen receive ohmic Mo2C co ntacts. Rectifying contacts are achieved either with aluminium or erbium af ter suitable pre- and post-treatments. A rectifying ratio of three orders o f magnitude can persist up to 500 degrees C and makes deep level transient spectroscopy (DLTS) possible, A deep level at (1.30 +/- 0.10) eV above the valence band is detected and seems to be common to various diamond crystals . Another deep level at (1.14 +/- 0.05) eV above the valence band exists on ly if an oxygen plasma treatment is applied to the sample before the Schott ky contact deposition. Thermal capture cross-sections are also deduced.