Growth of SiC nanorods at low temperature

Citation
Qy. Lu et al., Growth of SiC nanorods at low temperature, APPL PHYS L, 75(4), 1999, pp. 507-509
Citations number
15
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
APPLIED PHYSICS LETTERS
ISSN journal
0003-6951 → ACNP
Volume
75
Issue
4
Year of publication
1999
Pages
507 - 509
Database
ISI
SICI code
0003-6951(19990726)75:4<507:GOSNAL>2.0.ZU;2-F
Abstract
Cubic-phase SiC (beta-SiC) nanorods were synthesized through a one-step rea ction under pressure at 400 degrees C by which the crystalline product can be obtained directly without annealing at high temperature. The reaction wa s carried out in an autoclave by using SiCl4 and CCl4 as reactants and meta l Na as coreductant. The x-ray diffraction pattern indicates the formation of beta-SiC and x-ray photoelectron spectra display the stoichiometric rela tion between Si and C. Transmission electron microscopy images reveal that the product consists of nanorods with diameters from 10 to 40 nm and length s up to several micrometers. (C) 1999 American Institute of Physics. [S0003 -6951(99)01430-8].