Field emission characteristics of SiC capped Si tip array by ion beam synthesis

Citation
Dh. Chen et al., Field emission characteristics of SiC capped Si tip array by ion beam synthesis, J VAC SCI A, 17(4), 1999, pp. 2109-2112
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS
ISSN journal
0734-2101 → ACNP
Volume
17
Issue
4
Year of publication
1999
Part
2
Pages
2109 - 2112
Database
ISI
SICI code
0734-2101(199907/08)17:4<2109:FECOSC>2.0.ZU;2-5
Abstract
High dose carbon implantation into Si tip array was performed to synthesize SiC/Si heterostructure tip array. This was done using a high beam current density metal vapor Vacuum are ion source. Silicon tip arrays were prepared by anisotropic chemical etching. An implantation energy of 35 keV using a dose of 1.0 x 10(18) ions/cm(2) was performed. The array was subsequently a nnealed in argon ambient at 1200 degrees C, for various times to form the S iC surface layer. Scanning electron microscopy shows that the Si tips were sharp and uniformly arranged. X-ray photoelectron spectroscopy confirmed th at a thin SiC surface layer had been formed. Results show that electron emi ssion properties measured in ultrahigh vacuum depended on the sample treatm ent. A typical turn-on field was 15 V/mu m when the emission current densit y reaches 1 mu A/cm(2). This compares with a turn-on field of about 35 V/mu m for an unimplanted Si tip array. (C) 1999 American Vacuum Society. [S073 4-2101(99)23404-5].