GaN epitaxial growth on a Si(111) substrate using gamma-Al2O3 as an intermediate layer

Citation
N. Ohshima et al., GaN epitaxial growth on a Si(111) substrate using gamma-Al2O3 as an intermediate layer, J KOR PHYS, 34, 1999, pp. S359-S363
Citations number
30
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics
Journal title
JOURNAL OF THE KOREAN PHYSICAL SOCIETY
ISSN journal
0374-4884 → ACNP
Volume
34
Year of publication
1999
Supplement
S
Pages
S359 - S363
Database
ISI
SICI code
0374-4884(199906)34:<S359:GEGOAS>2.0.ZU;2-M
Abstract
An epitaxial growth process of GaN on gamma (gamma)-Al2O3/Si(111) substrate was investigated by in-situ reflection high-energy electron diffraction (R HEED) and atomic force microscopy (AFM) observations. The gamma-Al2O3 layer was epitaxially grown on a Si(lll) substrate by molecular beam epitaxy (MB E) method and used as an intermediate layer. The thickness of gamma-Al2O3 i s about 2 nm and the surface morphology is almost flat structure. The GaN e pilayer was regrown on the gamma-Al2O3/Si(111) structure by radio frequency MBE. It is found that the GaN layer is epitaxially grown on gamma-Al2O3/Si (111) substrate under the epitaxial relationship with [11 (2) over bar 0](G aN)//[1 (1) over bar 0]gamma-Al2O3/Si. It is considered that gamma-Al2O3 la yer is effective as the intermediate layer and hexagonal GaN layer succesfu lly grown on the gamma-Al2O3/Si(111) structure.