Formation of Si-based organic thin films with low dielectric constant by using remote plasma enhanced chemical vapor deposition from hexamethyldisiloxane

Citation
T. Fujii et al., Formation of Si-based organic thin films with low dielectric constant by using remote plasma enhanced chemical vapor deposition from hexamethyldisiloxane, THIN SOL FI, 344, 1999, pp. 457-460
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
344
Year of publication
1999
Pages
457 - 460
Database
ISI
SICI code
0040-6090(199904)344:<457:FOSOTF>2.0.ZU;2-X
Abstract
New interlayer insulating thin films with low dielectric constant were prop osed for multilevel interconnection of ultralarge scale integration circuit s. Hexamethyldisiloxane (HMDSO) monomer was used as an organic source and f luorinated Si based organic thin films were prepared by plasma enhanced che mical vapor deposition employing radio frequency inductively coupled plasma (ICP) with CF4. Moreover, Si based organic thin films containing benzene r ings (phenyl groups) were deposited from a HMDSO/toluene (C6H5CH3) source m ixture employing an O-2 ICP. From Fourier transform infrared spectroscopy, films had methyl-siloxane structure containing Si-O-Si and Si-CH3 bonds mai nly. The dielectric constants of the films deposited from HMDSO/CF4 and HMD SO/toluene/O-2 at a substrate temperature of 200 degrees C were 2.9 and 2.8 , respectively. (C) 1999 Elsevier Science S.A. All rights reserved.