Progress of dark spot and blister formation in polymeric lighting-emittingdiodes

Citation
Lm. Do et al., Progress of dark spot and blister formation in polymeric lighting-emittingdiodes, SYNTH METAL, 102(1-3), 1999, pp. 1006-1007
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
0379-6779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
1006 - 1007
Database
ISI
SICI code
0379-6779(199906)102:1-3<1006:PODSAB>2.0.ZU;2-M
Abstract
Progress of dark spot formation during the. device operation in polymeric l ight-emitting; diodes (PLEDs) with poly[2-methoxy-5-(2'-ethyl-hexyloxy)-1,4 -phenylene vinylene] (MEH-PPV) layer as an emissive layer was clarified by in situ measurement with the interferomer and other various analytical inst ruments. According to the morphological change of the Al electrode, the dar k spot in electroluminescent images was initiated by the pinhole. It is fou nd that the pinhole in devices is one of critical factors in the formation of dark spots. Blister formation due to the detachment of ITO / polymer lay ers in PELDs was varied by the humidity level of environmental conditions d uring operation and irradiation time of the light before operation.