Thin film transistors based on a beta,beta-disubstituted sexithiophene

Citation
Jm. Maud et al., Thin film transistors based on a beta,beta-disubstituted sexithiophene, SYNTH METAL, 102(1-3), 1999, pp. 985-985
Citations number
3
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
0379-6779 → ACNP
Volume
102
Issue
1-3
Year of publication
1999
Pages
985 - 985
Database
ISI
SICI code
0379-6779(199906)102:1-3<985:TFTBOA>2.0.ZU;2-K
Abstract
Previous attempts to develop thin film transistors using beta,beta-disubsti tuted sexithiophenes have resulted in devices with very low field effect ca rrier mobilities. In this paper we show that the mobility can be increased significantly if the oligomer is deposited onto a heated substrate.