Finding of a new organic semiconductor with an extremely narrow gap

Citation
N. Tajima et al., Finding of a new organic semiconductor with an extremely narrow gap, SYNTH METAL, 103(1-3), 1999, pp. 1958-1959
Citations number
4
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SYNTHETIC METALS
ISSN journal
0379-6779 → ACNP
Volume
103
Issue
1-3
Year of publication
1999
Pages
1958 - 1959
Database
ISI
SICI code
0379-6779(199906)103:1-3<1958:FOANOS>2.0.ZU;2-U
Abstract
We found that alpha-(BEDT-TTF)(2)I-3 placed under the pressure above 15kbar is a semiconductor with an extremely narrow gap ( gap energy might be as l ow as several kelvins). The Hall coefficient which varies 6 orders of magni tude between 300K and 1K, and a temperature independent conductivity are ke y properties to understand this material. No such organic conductors nor in organic conductors are ever known. Anomalous magnetotransport phenomena wer e observed at low temperatures.