Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition

Citation
C. Niikura et al., Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition, J APPL PHYS, 86(2), 1999, pp. 985-990
Citations number
19
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
86
Issue
2
Year of publication
1999
Pages
985 - 990
Database
ISI
SICI code
0021-8979(19990715)86:2<985:AECARI>2.0.ZU;2-L
Abstract
Polycrystalline Si (poly-Si) films with high crystalline fraction and low d angling-bond density were prepared by catalytic chemical vapor deposition ( Cat-CVD), often called hot-wire CVD. Directional anisotropy in electrical c onduction, probably due to structural anisotropy, was observed for Cat-CVD poly-Si films. A novel method to separately characterize both crystalline a nd amorphous phases in poly-Si films using anisotropic electrical conductio n was proposed. On the basis of results obtained by the proposed method and electron spin resonance measurements, reduction in dangling-bond density f or Cat-CVD poly-Si films was achieved using the condition to make the quali ty of the included amorphous phase high. The properties of Cat-CVD poly-Si films are found to be promising in solar-cell applications. (C) 1999 Americ an Institute of Physics. [S0021-8979(99)03514-8].