A novel low-temperature synthetic route to crystalline Si3N4

Citation
Kb. Tang et al., A novel low-temperature synthetic route to crystalline Si3N4, ADVAN MATER, 11(8), 1999, pp. 653
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Multidisciplinary,"Material Science & Engineering
Journal title
ADVANCED MATERIALS
ISSN journal
0935-9648 → ACNP
Volume
11
Issue
8
Year of publication
1999
Database
ISI
SICI code
0935-9648(19990602)11:8<653:ANLSRT>2.0.ZU;2-Q
Abstract
Communication: A low-temperature preparation of crystalline Si3N4 is descri bed that avoids the temperatures above 1200 degrees C necessary in other me thods. Si(3)N(4)s chemical stability, high-temperature strength, and excell ent creep resistance make it a promising Fe material for high-temperature e ngineering applications. The Figure shows a transmission electron microscop y image of a Si3N4 sample.