Correlation between the surface morphology and antiphase boundaries in ordered (GaIn)P

Citation
T. Sass et al., Correlation between the surface morphology and antiphase boundaries in ordered (GaIn)P, THIN SOL FI, 348(1-2), 1999, pp. 196-201
Citations number
24
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
THIN SOLID FILMS
ISSN journal
0040-6090 → ACNP
Volume
348
Issue
1-2
Year of publication
1999
Pages
196 - 201
Database
ISI
SICI code
0040-6090(19990706)348:1-2<196:CBTSMA>2.0.ZU;2-8
Abstract
The surface of metal-organic vapor-phase epitaxy (MOVPE) grown CuPtB-type o rdered (GaIn)P epitaxial layers and their interface to the GaAs substrate h ave been investigated using high-resolution transmission electron microscop y (HRTEM). We find the (GaIn)P surface to consist of bunched supersteps, (0 01) terraces, and vicinal regions. The dependence of the height and the den sity of supersteps, the portion of monolayer steps contained in supersteps as well as the density of antiphase boundaries on the growth temperature an d the substrate misorientation is investigated. By comparing the densities of the supersteps and the antiphase boundaries on the (GaIn)P surface and a t the interface to GaAs, we find that the supersteps at the interface are t he preferential formation site of antiphase boundaries in (GaIn)P. The corr elation is disturbed, however, by the effect of the width of supersteps and (001) terraces and of the existence of vicinal regions on the APE formatio n. (C) 1999 Elsevier Science S.A. All rights reserved.