Sub-100 nm structures by neutral atom lithography

Citation
T. Schulze et al., Sub-100 nm structures by neutral atom lithography, MICROEL ENG, 46(1-4), 1999, pp. 105-108
Citations number
14
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONIC ENGINEERING
ISSN journal
0167-9317 → ACNP
Volume
46
Issue
1-4
Year of publication
1999
Pages
105 - 108
Database
ISI
SICI code
0167-9317(199905)46:1-4<105:SNSBNA>2.0.ZU;2-C
Abstract
Instead of using a solid mask to pattern a light beam (optical lithography) we used a mask made of light to pattern a beam of neutral atoms (atom lith ography). By making use of two special features of the atom-light interacti on we wrote structures with periods below lambda/2. In the first approach w e inverted the focussing potentials by switching the detuning of the light field during the deposition. The second method uses the fact that atoms wit h a magnetic substructure in the electronic ground state are strongly sensi tive to the polarization of the light field. Both techniques produce sub-10 0 nm chromium structures in one and two dimensions on silicon substrates.