Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP InGaAs heterojunction bipolar transistor applications

Citation
Hc. Kuo et al., Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP InGaAs heterojunction bipolar transistor applications, J VAC SCI B, 17(3), 1999, pp. 1185-1189
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
17
Issue
3
Year of publication
1999
Pages
1185 - 1189
Database
ISI
SICI code
1071-1023(199905/06)17:3<1185:GOCDGU>2.0.ZU;2-H
Abstract
In this article, we present the comparison of material quality and device p erformance of gas-source molecular beam epitaxy (GSMBE)- and metal-organic molecular beam epitaxy (MOMBE)-grown C-doped InGaAs and npn InGaAs/InP hete rojunction bipolar transistors (HBTs). The results indicate that the crysta l quality of GSMBE-grown samples is comparable to that of MOMBE-grown sampl es. The GSMBE-grown HBTs show excellent de and high frequency performance. The de current gain (beta) was 37 at a collector current of 21 mA and the e mitter-base and base-collector junction ideality factors were 1.14 and 1.04 indicating good junction properties. For high frequency performance, the f (T) and f(max) are around 108 and 128 GHz for a 4000 Angstrom InGaAs collec tor with an emitter area of 3 x 10 mu m(2). Finally, the thermal stability of C-doped InGaAs and its effects on InP/IncaAs HBT device reliability will be discussed. (C) 1999 American Vacuum Society. [S0734-211X(99)05703-0].