Hc. Kuo et al., Growth of carbon doping Ga0.47In0.53As using CBr4 by gas source molecular beam epitaxy for InP InGaAs heterojunction bipolar transistor applications, J VAC SCI B, 17(3), 1999, pp. 1185-1189
In this article, we present the comparison of material quality and device p
erformance of gas-source molecular beam epitaxy (GSMBE)- and metal-organic
molecular beam epitaxy (MOMBE)-grown C-doped InGaAs and npn InGaAs/InP hete
rojunction bipolar transistors (HBTs). The results indicate that the crysta
l quality of GSMBE-grown samples is comparable to that of MOMBE-grown sampl
es. The GSMBE-grown HBTs show excellent de and high frequency performance.
The de current gain (beta) was 37 at a collector current of 21 mA and the e
mitter-base and base-collector junction ideality factors were 1.14 and 1.04
indicating good junction properties. For high frequency performance, the f
(T) and f(max) are around 108 and 128 GHz for a 4000 Angstrom InGaAs collec
tor with an emitter area of 3 x 10 mu m(2). Finally, the thermal stability
of C-doped InGaAs and its effects on InP/IncaAs HBT device reliability will
be discussed. (C) 1999 American Vacuum Society. [S0734-211X(99)05703-0].