Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects

Citation
Xl. Wu et al., Orange-green emission from porous Si coated with Ge films: The role of Ge-related defects, J APPL PHYS, 86(1), 1999, pp. 707-709
Citations number
24
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
86
Issue
1
Year of publication
1999
Pages
707 - 709
Database
ISI
SICI code
0021-8979(19990701)86:1<707:OEFPSC>2.0.ZU;2-E
Abstract
Photoluminescence (PL) spectra of porous Si (PS) coated with Ge films were examined using the 514.5 nm line of Ar+ laser. A new orange-green PL band, centered at 2.25 eV, was observed with full-width at half-maximum of simila r to 0.1 eV, in addition to the reported PL bands at 3.1, 2.0, and 1.72 eV. With increasing the thickness of Ge layer coated, the new PL band remains unchanged in peak energy but drops abruptly in intensity. Spectral analysis and some experimental results from Raman scattering and x-ray diffraction indicate that Ge-related defects at the interfaces between PS and the Ge na nocrystals embedded in the pores are responsible for the orange-green PL ba nd. (C) 1999 American Institute of Physics. [S0021-8979(99)05213-5].