Depletion of surface boron of heavily boron-doped diamond films by annealing

Citation
Kw. Wong et al., Depletion of surface boron of heavily boron-doped diamond films by annealing, DIAM RELAT, 8(6), 1999, pp. 1006-1010
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
8
Issue
6
Year of publication
1999
Pages
1006 - 1010
Database
ISI
SICI code
0925-9635(199906)8:6<1006:DOSBOH>2.0.ZU;2-N
Abstract
Surface boron of heavily boron-doped polycrystalline diamond thin films was found to be depleted upon annealing. Based on analyses using X-ray photoel ectron spectroscopy, X-ray photoelectron energy loss spectroscopy, time-of- flight secondary ion mass spectroscopy and Auger electron spectroscopy, sur face boron was found to be removed when the diamond film was annealed at 50 0 degrees C in vacuum and continued to be eliminated at 900 degrees C. The loss of surface boron undoubtedly altered the electronic properties of the diamond surface. This phenomenon is important in the fabrication of diamond -based electronic devices. (C) 1999 Elsevier Science S.A. All rights reserv ed.