Multilayer growth by low energy ion beam deposition

Citation
De. Joyce et al., Multilayer growth by low energy ion beam deposition, J MAGN MAGN, 199, 1999, pp. 731-733
Citations number
1
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS
ISSN journal
0304-8853 → ACNP
Volume
199
Year of publication
1999
Pages
731 - 733
Database
ISI
SICI code
0304-8853(199906)199:<731:MGBLEI>2.0.ZU;2-C
Abstract
We report our progress in the development of a relatively new deposition te chnique, that of direct low energy ion beam deposition. We describe this te chnique, which is based on ion implanter technology similar to that used in the semiconductor industry, where slow deposition rates, of order 0.005 nm /s, potentially allow for better control of the film properties as a functi on of depth. We present preliminary data from films grown on this system wi th deposition energies ranging from several tens of eV to several hundred e V with particular reference to the effect of deposition energy on morpholog y of Co based films and multilayers. We also explore possibilities for this technique which include ultra thin film growth and isotopic deposition. (C ) 1999 Elsevier Science B.V. All rights reserved.