Electron field emission and structural properties of carbon chemically vapor-deposited films

Citation
An. Obraztsov et al., Electron field emission and structural properties of carbon chemically vapor-deposited films, DIAM RELAT, 8(2-5), 1999, pp. 814-819
Citations number
10
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND AND RELATED MATERIALS
ISSN journal
0925-9635 → ACNP
Volume
8
Issue
2-5
Year of publication
1999
Pages
814 - 819
Database
ISI
SICI code
0925-9635(199903)8:2-5<814:EFEASP>2.0.ZU;2-E
Abstract
Low-voltage electron field emission was obtained for carbon films grown by the chemical vapor deposition (CVD) method in hydrogen-methane plasma activ ated by a d.c. discharge. We found that the electron field emission propert ies were improved by increasing the density of structural defects and non-d iamond carbon inclusions in polycrystalline diamond films and, for the firs t time, we found that completely non-diamond CVD carbon films displayed the best field emission characteristics. The threshold electric field for the completely non-diamond CVD carbon film cathodes was as low as 1.5 V mu m(-1 ), the emission current reached 1 mA cm(-2), and the emission site density exceeded 10(6) cm(-2) at the field of 4 V mu m(-1). Based on RHEED, HRTEM, Raman and cathodoluminescent data of CVD films grown on silicon substrates at various methane percentages in the gas mixture, we propose a general mec hanism for cold electron emission from materials containing graphite-like c arbon. (C) 1999 Elsevier Science S.A. All rights reserved.