Cubic boron nitride (c-BN) thin films were prepared at 600 degrees C by rad
io-frequency (rf) plasma pulsed laser deposition. All c-BN films prepared i
n Ar-rich plasma have poor adhesion on Si(100) substrates, but those prepar
ed in pure N-2 plasma can be maintained for more than 5 months without degr
adation. However, an increase of ion flux at an ion energy similar to that
of pure N-2 plasma results in the peeling of c-BN films. Thus, application
of pure N-2 plasma with suppressed ion flux can improve c-BN film adhesion.
Under such conditions, an extended sp(2)-bonded interlayer is suspected, w
ith the onset of the c-BN phase being delayed. Suppression of radiative dam
age in reduced nitrogen ion flux on both the c-BN and h-BN/t-BN phases are
important for the adhesive of c-BN films. (C) 1999 Elsevier Science S.A. Al
l rights reserved.