Improvement of the surface morphology of the epitaxial gamma-Al2O3 films on Si(111) grown using template growth with different temperatures by Al solid and N2O gas source molecular beam epitaxy (MBE)

Citation
Yc. Jung et al., Improvement of the surface morphology of the epitaxial gamma-Al2O3 films on Si(111) grown using template growth with different temperatures by Al solid and N2O gas source molecular beam epitaxy (MBE), J CRYST GR, 202, 1999, pp. 648-651
Citations number
3
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
202
Year of publication
1999
Pages
648 - 651
Database
ISI
SICI code
0022-0248(199905)202:<648:IOTSMO>2.0.ZU;2-Q
Abstract
We have investigated the crystalline quality and surface morphology of gamm a-Al2O3 films to make clear growth mode of Al2O3 grown by Al solid and N2O gas source MBE, and proposed a template growth method with different growth temperatures. The single-crystalline epitaxial Al2O3 layers were successfu lly grown at growth temperatures between 650 and 900 degrees C. However, at the higher temperatures above 800 degrees C, the surface morphology of fil ms was very rough because of the etching of Si substrates by N2O gas in the initial growth stage of Al2O3 growth. The Al2O3 films grown at low tempera tures below 650 degrees C were polycrystalline due to SiO2 formed in the in itial growth stage. The Al2O3 films grown with a template growth method hav e a lower values of RMS than that of Al2O3 films grown by usual growth meth od for same film thickness. (C) 1999 Elsevier Science B.V. All rights reser ved.