Evaporation and step edge diffusion in MBE

Citation
S. Schinzer et al., Evaporation and step edge diffusion in MBE, J CRYST GR, 202, 1999, pp. 85-87
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
202
Year of publication
1999
Pages
85 - 87
Database
ISI
SICI code
0022-0248(199905)202:<85:EASEDI>2.0.ZU;2-F
Abstract
Using kinetic Monte-Carlo simulations of a solid-on-solid model we investig ate the influence of step edge diffusion (SED) and evaporation on molecular beam epitaxy (MBE). Based on these investigations we propose two strategie s to optimize MBE-growth. The strategies are applicable in different growth regimes: during layer-by-layer growth one can reduce the desorption rate u sing a pulsed flux. In three-dimensional (3D) growth the SED can help to gr ow large, smooth structures, For this purpose the flux has to be reduced wi th time according to a power law. (C) 1999 Elsevier Science B.V. All rights reserved.