Quantitative mobility spectrum analysis (QMSA) for Hall characterization of electrons and holes in anisotropic bands

Citation
I. Vurgaftman et al., Quantitative mobility spectrum analysis (QMSA) for Hall characterization of electrons and holes in anisotropic bands, J ELEC MAT, 28(5), 1999, pp. 548-552
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF ELECTRONIC MATERIALS
ISSN journal
0361-5235 → ACNP
Volume
28
Issue
5
Year of publication
1999
Pages
548 - 552
Database
ISI
SICI code
0361-5235(199905)28:5<548:QMSA(F>2.0.ZU;2-W
Abstract
An extension of the quantitative mobility spectrum analysis (QMSA) procedur e, which determines free electron and hole densities and mobilities from ma gnetic-field-dependent Hall and resistivity measurements, to materials exhi biting anisotropic conduction is presented. As test cases, the fully comput er-automated procedure is used to analyze magnetotransport data from Bi thi n films and Bi/CdTe superlattices. Using the results of the QMSA procedure, the thermoelectric properties of these films can be accurately modeled. As a second example, an electron mobility anisotropy ratio of approximate to 4.5 is derived from the QMSA treatment of the Hall data for bulk Si samples .