Structural and optical characterization of CdS films grown by photochemical deposition

Citation
M. Ichimura et al., Structural and optical characterization of CdS films grown by photochemical deposition, J APPL PHYS, 85(10), 1999, pp. 7411-7417
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
JOURNAL OF APPLIED PHYSICS
ISSN journal
0021-8979 → ACNP
Volume
85
Issue
10
Year of publication
1999
Pages
7411 - 7417
Database
ISI
SICI code
0021-8979(19990515)85:10<7411:SAOCOC>2.0.ZU;2-X
Abstract
CdS thin films are grown by photochemical deposition from an aqueous soluti on and characterized by x-ray diffraction (XRD), Raman spectroscopy, photol uminescence measurement, and optical transmission spectroscopy. The films a re deposited at room temperature and annealed at temperatures up to 500 deg rees C. The as-deposited film is dominantly zinc blende cubic. The cubic ph ase remains dominant until the annealing temperature becomes higher than 40 0 degrees C. By the annealing at 450 degrees C, the XRD pattern turns to th at of hexagonal phase. Moreover, its peak width decreases and the near-band -edge luminescence begins to be observed. The band gap is decreased by anne aling below 400 degrees C and then abruptly increased by the annealing at 4 50 degrees C. This annealing behavior of the band gap is interpreted consid ering the quantum size effects, the band tail due to disorder, and the cubi c-hexagonal transition. (C) 1999 American Institute of Physics. [S0021-8979 (99)05310-4].