Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors

Citation
F. Nava et al., Evidence for plasma effect on charge collection efficiency in proton irradiated GaAs detectors, NUCL INST A, 426(1), 1999, pp. 185-191
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
426
Issue
1
Year of publication
1999
Pages
185 - 191
Database
ISI
SICI code
0168-9002(19990421)426:1<185:EFPEOC>2.0.ZU;2-T
Abstract
The radiation damage in 100 mu m thick Schottky diodes made on semi-insulat ing undoped GaAs materials, were studied using alpha-, beta-, proton- and g amma-spectroscopy as well as I-V measurements. The results have been analys ed within the framework of the Hecht model to investigate the influence of the plasma produced by short-range strongly ionising particles on the detec tor performance after 24 GeV proton irradiation. It has been found that wit h the mean free drift lengths for electrons and holes determined from alpha -spectra in overdepleted detectors, the charge collection efficiency for be ta-particles, cce(beta), is well predicted in the unirradiated detectors, w hile in the most irradiated ones, the cce(beta) is underestimated by more t han 40%. The observed disagreement can be explained by assuming that the ch arge carrier recombination in the plasma region of such detectors, becomes significant. (C) 1999 Elsevier Science B.V. All rights reserved.