The CMS silicon microstrip detectors: research and development

Citation
N. Bacchetta et al., The CMS silicon microstrip detectors: research and development, NUCL INST A, 426(1), 1999, pp. 16-23
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Spectroscopy /Instrumentation/Analytical Sciences","Instrumentation & Measurement
Journal title
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION A-ACCELERATORS SPECTROMETERS DETECTORS AND ASSOCIATED EQUIPMENT
ISSN journal
0168-9002 → ACNP
Volume
426
Issue
1
Year of publication
1999
Pages
16 - 23
Database
ISI
SICI code
0168-9002(19990421)426:1<16:TCSMDR>2.0.ZU;2-S
Abstract
A large quantity of silicon microstrip detectors is foreseen to be used as part of the CMS tracker. A specific research and development program has be en carried out with the aim of defining layouts and technological solutions suitable for the use of silicon detectors in high radiation environment. R esults presented here summarise this work on many research areas such as te chniques for device manufacturing, pre- and post-irradiation electrical cha racterization, silicon bulk defects analysis and simulations, system perfor mance analytical calculations and simulations and test beam analysis. As a result of this work we have chosen to use single-sided, AC-coupled, poly si licon biased, 300 mu m thick, p(+) on n substrate detectors. We feel confid ent that these devices will match the required performances for the CMS tra cker provided they can be operated at bias voltages as high as 500 V. Such high-voltage devices have been succesfully manufactured and we are now conc entrating our efforts in enhancing yield and reliability. (C) 1999 Elsevier Science B.V. All rights reserved.