Influence of light excitation on mesoscopic electrical non-uniformities inundoped n-type high-resistivity LEC GaAs

Citation
W. Siegel et al., Influence of light excitation on mesoscopic electrical non-uniformities inundoped n-type high-resistivity LEC GaAs, SEMIC SCI T, 14(4), 1999, pp. L15-L17
Citations number
9
Language
INGLESE
art.tipo
Letter
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Journal title
SEMICONDUCTOR SCIENCE AND TECHNOLOGY
ISSN journal
0268-1242 → ACNP
Volume
14
Issue
4
Year of publication
1999
Pages
L15 - L17
Database
ISI
SICI code
0268-1242(199904)14:4<L15:IOLEOM>2.0.ZU;2-L
Abstract
Point contact current measurements with high spatial resolution were perfor med on undoped high-resistivity (up to semi-insulating) LEC GaAs samples un der IR light excitation. Mesoscopic electrical non-uniformities, existing i n the samples and strongly related to the cellular structure of dislocation s, show different reactions to the light excitation depending on the dark c arrier concentration of the samples. Especially, in samples with a Hall mob ility strongly reduced by such non-uniformities the amplitude of the fluctu ations of the point contact current, respectively of the resistivity betwee n cell walls and cell centres, is clearly reduced by light excitation. This homogenization is connected with an enhancement of the photo Hall mobility in these samples compared to the dark Hall mobility.