Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates

Citation
S. Cho et al., Metalorganic vapor phase epitaxy growth and properties of GaAs/AlGaAs and InGaAs/GaAs quantum well structures on (111)A GaAs substrates, MICROELEC J, 30(4-5), 1999, pp. 455-459
Citations number
32
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Eletrical & Eletronics Engineeing
Journal title
MICROELECTRONICS JOURNAL
ISSN journal
0026-2692 → ACNP
Volume
30
Issue
4-5
Year of publication
1999
Pages
455 - 459
Database
ISI
SICI code
0026-2692(199904/05)30:4-5<455:MVPEGA>2.0.ZU;2-K
Abstract
We review the recent advances in the fabrication and properties of GaAs/AlG aAs and InGaAs/GaAs quantum well (QW) structures grown on (111)A GaAs subst rates by atmospheric pressure metalorganic vapor phase epitaxy (MOVPE). We show that a 25-period GaAs/AlGaAs multi-QW (MQW) structure was fabricated w ith good crystal quality, high photoluminescence (PL) emission intensity an d monolayer (ML) interfacial roughness. A PL full width at half maximum (FW HM) of 10.5 meV was achieved for a 25-period MQW with a well width of 44 An gstrom. This is the narrowest linewidth reported to date for any similar st ructures grown on (111)A or B substrates by any growth technique. We also r eport the properties of an InGaAs/GaAs single quantum well structure grown on (111)A GaAs. For this structure, the PL FWHM value was 9.1 meV, correspo nding to a 1 ML interfacial roughness for a well width of 41 Angstrom. This is the first demonstration of an InGaAs/GaAs quantum well structure grown on (111)A or (111)B GaAs by MOVPE. (C) 1999 Elsevier Science Ltd. All right s reserved.