Carbon nitride thin films synthesized at high temperature by using RF-plasma PLD

Citation
Yk. Yap et al., Carbon nitride thin films synthesized at high temperature by using RF-plasma PLD, J CRYST GR, 199, 1999, pp. 1028-1031
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physical Chemistry/Chemical Physics
Journal title
JOURNAL OF CRYSTAL GROWTH
ISSN journal
0022-0248 → ACNP
Volume
199
Year of publication
1999
Part
2
Pages
1028 - 1031
Database
ISI
SICI code
0022-0248(199903)199:<1028:CNTFSA>2.0.ZU;2-1
Abstract
Carbon nitride (CN) thin films were synthesized at 600 degrees C. Despite t he high synthesis temperature, the nitrogen content of CN films was observe d to increase with the increase of negative DC bias voltage of Si substrate as determined by X-ray photoelectron spectroscopy. Transformation of CN bi nding states was found to proceed with the increase of bias voltage as indi cated by a series of Fourier transform infrared spectra. These films were d ominated by tetrahedral sp(3) C-N binding state at a substrate bias voltage above - 120 V. As observed from Raman spectroscopy, the carbon matrix was transformed from graphitic sp(2) into sp(3) carbon hybridization. Mechanism of tetrahedral CN phase formation at high temperature is proposed. (C) 199 9 Elsevier Science B.V. All rights reserved.