Carbon nitride (CN,) thin films were deposited by means of the pulsed laser
deposition technique. Deposition was carried out at a substrate temperatur
e of 600 degrees C with the assistance of a radio-frequency ( 13.56 MHz) pl
asma. Effects of d.c. bias voltage on the Si substrate were studied by inve
stigating the binding states of these films. Nitrogen content in CN, films
was found to increase markedly with increasing bias voltage, even at high s
ynthesis temperature. Fourier transform infrared spectroscopy (FTIR) and Ra
man spectra showed that the number of tetrahedral C-N bonds increased with
increasing substrate bias voltage. Both nitrogen content and binding state
of the tetrahedral C-N phase were constant upon annealing at 800 degrees C.
Tetrahedral CNx films with high thermal stability were realized.