Deposition of CNx films by pulsed laser deposition technique

Citation
S. Kida et al., Deposition of CNx films by pulsed laser deposition technique, DIAM FILM T, 8(6), 1998, pp. 485-490
Citations number
12
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND FILMS AND TECHNOLOGY
ISSN journal
0917-4540 → ACNP
Volume
8
Issue
6
Year of publication
1998
Pages
485 - 490
Database
ISI
SICI code
0917-4540(1998)8:6<485:DOCFBP>2.0.ZU;2-#
Abstract
Carbon nitride (CN,) thin films were deposited by means of the pulsed laser deposition technique. Deposition was carried out at a substrate temperatur e of 600 degrees C with the assistance of a radio-frequency ( 13.56 MHz) pl asma. Effects of d.c. bias voltage on the Si substrate were studied by inve stigating the binding states of these films. Nitrogen content in CN, films was found to increase markedly with increasing bias voltage, even at high s ynthesis temperature. Fourier transform infrared spectroscopy (FTIR) and Ra man spectra showed that the number of tetrahedral C-N bonds increased with increasing substrate bias voltage. Both nitrogen content and binding state of the tetrahedral C-N phase were constant upon annealing at 800 degrees C. Tetrahedral CNx films with high thermal stability were realized.