c-BN film growth by RF plasma-assisted pulsed laser deposition

Citation
T. Aoyama et al., c-BN film growth by RF plasma-assisted pulsed laser deposition, DIAM FILM T, 8(6), 1998, pp. 477-483
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
DIAMOND FILMS AND TECHNOLOGY
ISSN journal
0917-4540 → ACNP
Volume
8
Issue
6
Year of publication
1998
Pages
477 - 483
Database
ISI
SICI code
0917-4540(1998)8:6<477:CFGBRP>2.0.ZU;2-K
Abstract
We successfully fabricated BN films with an approximately 70% fraction of c ubic boron nitride (c-BN) without delamination on Si(100) substrate using t he RF (radio frequency: 13.56 MHz) plasma-assisted pulsed laser deposition (RF-PLD) technique. The Nd:YAG laser(wavelength: 1064 nm) was converted to 213 nm by the nonlinear optical crystal CLBO (CsLiB6O10), and irradiated to the rotating, hot-pressed h-BN target. The experiment was performed at var ious gas compositions (Ar and N-2); however, the c-BN content was almost co nstant (similar to 70%) in all cases. The c-BN content in N-2-rich or pure N-2 plasma exhibit good adhesion on the Si substrate without delamination m ore than 60 days after the deposition.