Formation of silicided shallow p(+) n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation

Citation
Mh. Juang et al., Formation of silicided shallow p(+) n junctions by BF2+ implantation into thin amorphous-Si or Ni/amorphous-Si films on Si substrates and subsequent Ni silicidation, J VAC SCI B, 17(2), 1999, pp. 392-396
Citations number
29
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science","Material Science & Engineering
Journal title
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
ISSN journal
1071-1023 → ACNP
Volume
17
Issue
2
Year of publication
1999
Pages
392 - 396
Database
ISI
SICI code
1071-1023(199903/04)17:2<392:FOSSPN>2.0.ZU;2-1
Abstract
The process scheme that forms NiSi-silicided shallow p(+)n junctions by BF2 + implantation into thin amorphous-Si (a-Si) or Ni/a-Si films on Si substra tes and subsequent Ni silicidation has been studied. As for the scheme usin g a-Si as an implantation barrier, an NiSi-silicided junction with a leakag e of about 0.7 nA/cm(2) at - 5 V is obtained by the sample Ni silicided at 700 degrees C for 30 min. The implantation energy and the crystallinity of the deposited Si films after annealing would greatly affect the junctions f ormed at various temperatures, attributable to different, implantation effe cts and boron depth profile. However, the junctions formed by rapid thermal processing or high implant energy are considerably degraded at 800 degrees C, attributable to anomalous Ni penetration into the Si substrate with the further silicidation of NiSi into NiSi2. On the other hand, the specimens with Ni/a-Si as an implantation barrier sustain few defects, thus significa ntly suppressing the junction degradation at 800 degrees C. However the for med junctions are worse than those by the former scheme, mainly due to lowe r dopant drive-in efficiency. (C) 1999 American Vacuum Society. [S0734-211X (99)03902-5].