Highly-selective dry etching of InAlAs over InGaAs assisted by ArF excimerlaser with Cl-2 gas

Citation
H. Takazawa et S. Takatani, Highly-selective dry etching of InAlAs over InGaAs assisted by ArF excimerlaser with Cl-2 gas, JPN J A P 1, 38(2B), 1999, pp. 1135-1138
Citations number
17
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
2B
Year of publication
1999
Pages
1135 - 1138
Database
ISI
SICI code
0021-4922(199902)38:2B<1135:HDEOIO>2.0.ZU;2-R
Abstract
Highly selective etching of InAlAs over InGaAs was observed by irradiation with a 193-nm ArF excimer laser in a Cl-2 atmosphere. The etching rate of I nAlAs relative to that of InGaAs increased as the laser fluence decreased a nd the Cl-2 pressure increased, and the highest observed etching rate ratio exceeded 70. The result was compared with the case of etching with HBr gas , where no enhancement of InAlAs etching was observed. It is speculated tha t the very fast InAlAs etching rate is due to the fast Al reaction and deso rption, which introduces new reactive sites on the surface.