Growth of TlInGaAs on InP by gas-source molecular beam epitaxy

Citation
K. Takenaka et al., Growth of TlInGaAs on InP by gas-source molecular beam epitaxy, JPN J A P 1, 38(2B), 1999, pp. 1026-1028
Citations number
11
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
2B
Year of publication
1999
Pages
1026 - 1028
Database
ISI
SICI code
0021-4922(199902)38:2B<1026:GOTOIB>2.0.ZU;2-M
Abstract
TlInGaAs quaternary layers are grown on InP substrates bg gas-source molecu lar beam epitaxy (MBE) for the first time. The application of TlInGaAs was proposed for long-wavelength optical devices as well as temperature-insensi tive wavelength laser diodes. During the growth, RHEED (reflection high-ene rgy electron diffraction) patterns show(2 x 2) reconstructions. Successful growth of TlInGaAs is confirmed with X-ray diffraction measurements. PL emi ssion is observed and the temperature variation of PL peak energy is as sma ll as 0.1 meV/K.