The structural properties and energy-gap dependence on InBi content and tem
perature are investigated for metalorganic-vapor-phase-epitaxy (MOVPE)-grow
n InAsBi. All measurement results-X-ray-diffraction, secondary ion mass spe
ctroscopy (SIMS), and Rutherford-backscattering-spectroscopy (RBS) channeli
ng-show that the layer has good crystalline quality. The energy-gap depende
nce on InBi content is evaluated by optical-transmission and low-temperatur
e photo luminescence, and it is shown that the dependence can be expressed
by a linear equation. The temperature dependence of E-g (Delta E(g/)Delta T
) is evaluated by optical-transmission measurement. The Delta E-g/Delta T o
f 0.22 mcV/K obtained for InAs0.963Bi0.037 is smaller than that of InSb (0.
29 meV/K), whose energy gap is smaller than that of InAs0.963Bi0.037.