Structural and energy-gap characterization of metalorganic-vapor-phase-epitaxy-grown InAsBi

Authors
Citation
H. Okamoto et K. Oe, Structural and energy-gap characterization of metalorganic-vapor-phase-epitaxy-grown InAsBi, JPN J A P 1, 38(2B), 1999, pp. 1022-1025
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
2B
Year of publication
1999
Pages
1022 - 1025
Database
ISI
SICI code
0021-4922(199902)38:2B<1022:SAECOM>2.0.ZU;2-V
Abstract
The structural properties and energy-gap dependence on InBi content and tem perature are investigated for metalorganic-vapor-phase-epitaxy (MOVPE)-grow n InAsBi. All measurement results-X-ray-diffraction, secondary ion mass spe ctroscopy (SIMS), and Rutherford-backscattering-spectroscopy (RBS) channeli ng-show that the layer has good crystalline quality. The energy-gap depende nce on InBi content is evaluated by optical-transmission and low-temperatur e photo luminescence, and it is shown that the dependence can be expressed by a linear equation. The temperature dependence of E-g (Delta E(g/)Delta T ) is evaluated by optical-transmission measurement. The Delta E-g/Delta T o f 0.22 mcV/K obtained for InAs0.963Bi0.037 is smaller than that of InSb (0. 29 meV/K), whose energy gap is smaller than that of InAs0.963Bi0.037.