IMAGING OF LOCAL CHARGE-DENSITY IN AN INAS GAAS 2-DIMENSIONAL HETEROSTRUCTURE BY SCANNING-TUNNELING-MICROSCOPY/

Citation
H. Yamaguchi et Y. Hirayama, IMAGING OF LOCAL CHARGE-DENSITY IN AN INAS GAAS 2-DIMENSIONAL HETEROSTRUCTURE BY SCANNING-TUNNELING-MICROSCOPY/, JPN J A P 2, 37(8A), 1998, pp. 899-901
Citations number
22
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Volume
37
Issue
8A
Year of publication
1998
Pages
899 - 901
Database
ISI
SICI code
0021-4922(1998)37:8A<899:IOLCIA>2.0.ZU;2-8
Abstract
We have studied the bias-voltage dependence of constant-current images obtained by scanning tunneling microscopy (STM) at 4.8 K on an InAs t hin film grown on GaAs (111)A substrates. In-plane surface-height vari ation as large as 0.1-0.2 nm was detected on the step-free region, onl y with the negative sample voltages higher than similar to 0.6 V. Beca use the bias condition corresponds to the tunneling of electrons accum ulated in the InAs film to the STM tip, we believe that the image refl ects the local electron density in InAs/GaAs two-dimensional heterostr uctures.