T. Ishikawa et al., WELL-THICKNESS DEPENDENCE OF HIGH-TEMPERATURE CHARACTERISTICS IN 1.3-MU-M ALGAINAS-INP STRAINED-MULTIPLE-QUANTUM-WELL LASERS, IEEE photonics technology letters, 10(12), 1998, pp. 1703-1705
Well-thickness dependence of temperature characteristics of 1.3-mu m A
lGaInAs-InP strained-multiple-quantum-well lasers was investigated. Hi
gher characteristic temperatures of threshold current density were obt
ained for thicker wells up to 6 nm, Fabricated ridge-waveguide lasers
with 6-nm-thick wells exhibited characteristic temperature of as high
as 125 K, Relaxation-oscillation frequency reduced by only 13% between
25 degrees C and 85 degrees C.