WELL-THICKNESS DEPENDENCE OF HIGH-TEMPERATURE CHARACTERISTICS IN 1.3-MU-M ALGAINAS-INP STRAINED-MULTIPLE-QUANTUM-WELL LASERS

Citation
T. Ishikawa et al., WELL-THICKNESS DEPENDENCE OF HIGH-TEMPERATURE CHARACTERISTICS IN 1.3-MU-M ALGAINAS-INP STRAINED-MULTIPLE-QUANTUM-WELL LASERS, IEEE photonics technology letters, 10(12), 1998, pp. 1703-1705
Citations number
9
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
1041-1135
Volume
10
Issue
12
Year of publication
1998
Pages
1703 - 1705
Database
ISI
SICI code
1041-1135(1998)10:12<1703:WDOHCI>2.0.ZU;2-0
Abstract
Well-thickness dependence of temperature characteristics of 1.3-mu m A lGaInAs-InP strained-multiple-quantum-well lasers was investigated. Hi gher characteristic temperatures of threshold current density were obt ained for thicker wells up to 6 nm, Fabricated ridge-waveguide lasers with 6-nm-thick wells exhibited characteristic temperature of as high as 125 K, Relaxation-oscillation frequency reduced by only 13% between 25 degrees C and 85 degrees C.