E. Ehret et O. Marty, CORRELATION BETWEEN ELECTRICAL-ACTIVITY AND EXTENDED DEFECT IN EMC MULTICRYSTALLINE MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 24-30
Polycrystalline silicon of different origins may show differences in s
tructural and electrical properties. The configuration of structural d
efects like dislocations and grain boundaries could be dependent of th
e growth conditions. The understanding of recombination origins is dif
ficult as a consequence of the intrinsic complexity of polycrystalline
materials where interactions between point defects and extended defec
ts control the electrical properties. We discuss the results of chemic
al, structural and electrical characterization of a polycrystalline si
licon grown by the electromagnetically casting (EMC) technique recentl
y introduced. For the EMC process, we concluded that the main limiting
factor is the crystallographic defects in the shape of small grain an
d bundles of dislocations. However, these structural defects do not in
volve a strong recombination in entire materials. (C) 1998 Elsevier Sc
ience S.A. All rights reserved.