CORRELATION BETWEEN ELECTRICAL-ACTIVITY AND EXTENDED DEFECT IN EMC MULTICRYSTALLINE MATERIALS

Authors
Citation
E. Ehret et O. Marty, CORRELATION BETWEEN ELECTRICAL-ACTIVITY AND EXTENDED DEFECT IN EMC MULTICRYSTALLINE MATERIALS, Materials science & engineering. B, Solid-state materials for advanced technology, 56(1), 1998, pp. 24-30
Citations number
16
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Material Science","Physics, Condensed Matter
ISSN journal
0921-5107
Volume
56
Issue
1
Year of publication
1998
Pages
24 - 30
Database
ISI
SICI code
0921-5107(1998)56:1<24:CBEAED>2.0.ZU;2-F
Abstract
Polycrystalline silicon of different origins may show differences in s tructural and electrical properties. The configuration of structural d efects like dislocations and grain boundaries could be dependent of th e growth conditions. The understanding of recombination origins is dif ficult as a consequence of the intrinsic complexity of polycrystalline materials where interactions between point defects and extended defec ts control the electrical properties. We discuss the results of chemic al, structural and electrical characterization of a polycrystalline si licon grown by the electromagnetically casting (EMC) technique recentl y introduced. For the EMC process, we concluded that the main limiting factor is the crystallographic defects in the shape of small grain an d bundles of dislocations. However, these structural defects do not in volve a strong recombination in entire materials. (C) 1998 Elsevier Sc ience S.A. All rights reserved.