EQUIVALENT-CIRCUIT REPRESENTATION FOR RESONANT INTERBAND TUNNELING STRUCTURES

Citation
H. Sanada et al., EQUIVALENT-CIRCUIT REPRESENTATION FOR RESONANT INTERBAND TUNNELING STRUCTURES, Electronics & communications in Japan. Part 2, Electronics, 81(9), 1998, pp. 1-10
Citations number
25
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Engineering, Eletrical & Electronic
ISSN journal
8756-663X
Volume
81
Issue
9
Year of publication
1998
Pages
1 - 10
Database
ISI
SICI code
8756-663X(1998)81:9<1:ERFRIT>2.0.ZU;2-#
Abstract
Electron wave devices that use quantum-mechanical waves have been acti vely researched. It is important to understand and to use wave phenome na in potential structures because they are the operational basis of d evices. Recently, some circuit-theoretical approaches have been propos ed for analyzing and designing wave phenomena in potential structures. In this paper, equivalent circuits based on two- and three-band model s that describe wave phenomena in potential structures composed of var ious semiconductor materials are proposed. By using the proposed equiv alent circuits, wave phenomena in resonant interband tunneling (RIT) s tructures are formulated in terms of equivalent circuits. To confirm t he validity of this method, resonant tunneling phenomena are analyzed. Circuit functions and matrices, especially the impedance concept, can be effectively used for analyzing and designing wave phenomena in RIT structures. (C) 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(9): 1-10, 1998.