H. Sanada et al., EQUIVALENT-CIRCUIT REPRESENTATION FOR RESONANT INTERBAND TUNNELING STRUCTURES, Electronics & communications in Japan. Part 2, Electronics, 81(9), 1998, pp. 1-10
Electron wave devices that use quantum-mechanical waves have been acti
vely researched. It is important to understand and to use wave phenome
na in potential structures because they are the operational basis of d
evices. Recently, some circuit-theoretical approaches have been propos
ed for analyzing and designing wave phenomena in potential structures.
In this paper, equivalent circuits based on two- and three-band model
s that describe wave phenomena in potential structures composed of var
ious semiconductor materials are proposed. By using the proposed equiv
alent circuits, wave phenomena in resonant interband tunneling (RIT) s
tructures are formulated in terms of equivalent circuits. To confirm t
he validity of this method, resonant tunneling phenomena are analyzed.
Circuit functions and matrices, especially the impedance concept, can
be effectively used for analyzing and designing wave phenomena in RIT
structures. (C) 1998 Scripta Technica, Electron Comm Jpn Pt 2, 81(9):
1-10, 1998.