ELECTRODE METAL DEPENDENCE OF LEAKAGE CURRENT CHARACTERISTICS OF EPITAXIAL BATIO3 FILMS ON P-TYPE AND N-TYPE ELECTRODES

Citation
M. Okano et al., ELECTRODE METAL DEPENDENCE OF LEAKAGE CURRENT CHARACTERISTICS OF EPITAXIAL BATIO3 FILMS ON P-TYPE AND N-TYPE ELECTRODES, JPN J A P 1, 37(9B), 1998, pp. 5101-5103
Citations number
18
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Volume
37
Issue
9B
Year of publication
1998
Pages
5101 - 5103
Database
ISI
SICI code
0021-4922(1998)37:9B<5101:EMDOLC>2.0.ZU;2-4
Abstract
BaTiO3 (BTO) films are grown on the bottom electrodes of Nb-doped SrTi O3 (STON) and La2CuO4. The current through the BTO films exhibits diod e properties having a reproducible hysteresis at a forward bias with p olarity determined by the bottom electrode. In BTO/La2CuO4 the current intensity is almost independent of metal top-electrode materials, whi ch is explicable by I regarding BTO/La2CuO4 as a pn junction [p: hole carrier, n: electron carrier]. The current through BTO/STON is limited by the work functions of the metal and BTO, suggesting that it is sup pressed by an electrode metal with a high work function, e.g., Pt, in an n-type ferroelectric such as BTO. In a p-type ferroelectric such as PLZT. it is suppressed by an electrode metal with a low work function . The relaxation current, the large leakage current in epitaxial ferro electric films, and the effect of the ferroelectric carrier type on fa tigue are discussed.