Electron affinity and effect of annealing on heavily boron-doped diamond films

Citation
Kw. Wong et al., Electron affinity and effect of annealing on heavily boron-doped diamond films, JPN J A P 1, 38(2A), 1999, pp. 791-794
Citations number
20
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Apllied Physucs/Condensed Matter/Materiales Science
Volume
38
Issue
2A
Year of publication
1999
Pages
791 - 794
Database
ISI
SICI code
0021-4922(199902)38:2A<791:EAAEOA>2.0.ZU;2-0
Abstract
A series of heavily boron-doped polycrystalline diamond films was studied. It was found that the electron affinity of the diamond surfaces increased w ith increasing doping concentration and the Fermi level was pinned at simil ar to 0.35 eV above the valence band maximum (VBM). After annealing at simi lar to 500 degrees C, the electron affinity of all samples decreased and th e Fermi level increased to 0.87 eV. These changes were concurrent with a de crease in the concentration of both boron and oxygen, and an increase in th at of BxOy relative to elemental boron on the diamond surfaces. A model was proposed to explain the dependence of electron affinity on boron concentra tion, and to explain other changes observed upon annealing.