CUBIC BORON-NITRIDE FILM SYNTHESIS BY REACTIVE SPUTTERING OF PURE BORON TARGET IN ELECTRON-CYCLOTRON-RESONANCE PLASMAS

Citation
M. Wakatsuchi et al., CUBIC BORON-NITRIDE FILM SYNTHESIS BY REACTIVE SPUTTERING OF PURE BORON TARGET IN ELECTRON-CYCLOTRON-RESONANCE PLASMAS, JPN J A P 2, 37(9AB), 1998, pp. 1082-1084
Citations number
13
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Volume
37
Issue
9AB
Year of publication
1998
Pages
1082 - 1084
Database
ISI
SICI code
0021-4922(1998)37:9AB<1082:CBFSBR>2.0.ZU;2-I
Abstract
Cubic boron nitride (c-BN) thin films are synthesized by reactive sput tering. Pure boron is used as the sputtering target, which is de-biass ed in an Ar/N-2 electron cyclotron resonance plasma, Substrates are rf -biased with a frequency of 13.56 MHz. BN films with a dominant cubic phase are obtained in the cast of a high ion-to-boron flux ratio of 12 at the substrate self-bias higher than -175 V; the transferred moment um per atom is about 1260 (eV amu)(1/2), which is larger than the valu e predicted using the momentum transfer model for c-BN synthesis by a factor of 4. An intermediate layer between the c-BN layer and the subs trate improves the adhesion of the c-BN layer and prevent a exfoliatio n. This intermediate layer is deposited under an Ar/N-2 gas mixing rat io of 9 without rf bias.