S. Tanaka et H. Kitagawa, DIFFUSION AND ELECTRICAL-PROPERTIES OF IRON-RELATED DEFECTS IN N-TYPESILICON GROWN BY CZOCHRALSKI-ZONE AND FLOATING-ZONE METHOD, JPN J A P 1, 37(9A), 1998, pp. 4656-4662
Diffusion and electrical properties of iron-related defects in n-type
silicon are studied in Czochralski (CZ) and floating zone (FZ) silicon
by means of deep level transient spectroscopy and the Hall effect. In
troduction and annealing behaviors of electrically active iron-related
defects reveal that these defects can be related to complexes contain
ing interstitial iron atoms. The formation of iran-related defects at
high temperatures includes defect reaction processes such that the obs
erved complexes could be due to the intermediate states in consecutive
reactions of iron-related complex formation. The electrically active
complexes are independent of phosphorus or oxygen atoms. The iron-rela
ted defects observed in CZ silicon are identical to those observed in
FZ silicon.