DIFFUSION AND ELECTRICAL-PROPERTIES OF IRON-RELATED DEFECTS IN N-TYPESILICON GROWN BY CZOCHRALSKI-ZONE AND FLOATING-ZONE METHOD

Citation
S. Tanaka et H. Kitagawa, DIFFUSION AND ELECTRICAL-PROPERTIES OF IRON-RELATED DEFECTS IN N-TYPESILICON GROWN BY CZOCHRALSKI-ZONE AND FLOATING-ZONE METHOD, JPN J A P 1, 37(9A), 1998, pp. 4656-4662
Citations number
29
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Volume
37
Issue
9A
Year of publication
1998
Pages
4656 - 4662
Database
ISI
SICI code
0021-4922(1998)37:9A<4656:DAEOID>2.0.ZU;2-L
Abstract
Diffusion and electrical properties of iron-related defects in n-type silicon are studied in Czochralski (CZ) and floating zone (FZ) silicon by means of deep level transient spectroscopy and the Hall effect. In troduction and annealing behaviors of electrically active iron-related defects reveal that these defects can be related to complexes contain ing interstitial iron atoms. The formation of iran-related defects at high temperatures includes defect reaction processes such that the obs erved complexes could be due to the intermediate states in consecutive reactions of iron-related complex formation. The electrically active complexes are independent of phosphorus or oxygen atoms. The iron-rela ted defects observed in CZ silicon are identical to those observed in FZ silicon.