EFFECT OF COMPOSITION AND ANNEALING ON STRUCTURAL DEFECTS IN HIGH-DOSE ARSENIC-IMPLANTED SI1-XGEX ALLOYS

Citation
Pi. Gaiduk et al., EFFECT OF COMPOSITION AND ANNEALING ON STRUCTURAL DEFECTS IN HIGH-DOSE ARSENIC-IMPLANTED SI1-XGEX ALLOYS, Journal of applied physics, 84(8), 1998, pp. 4185-4192
Citations number
21
Language
INGLESE
art.tipo
Article
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
0021-8979
Volume
84
Issue
8
Year of publication
1998
Pages
4185 - 4192
Database
ISI
SICI code
0021-8979(1998)84:8<4185:EOCAAO>2.0.ZU;2-E
Abstract
The evolution of structural defects in high-dose arsenic-implanted (pe ak concentration 9 x 10(20) - 2.7 x 10(21) cm(-3)), epitaxially grown, relaxed Si1-xGex (0.15 less than or equal to x less than or equal to 0.50) during rapid-thermal annealing (RTA) has been investigated as a function of composition x and RTA using transmission-electron microsco py. The formation of monoclinic GeAs precipitates is confirmed and exa mined at high RTA temperature. A new type of three-dimensional defect (which we call a ''hair-like'' defect) is found in the alloys of x = 0 .15-0.25. Such defects have not been observed in pure silicon and thei r presence in SiGe alloys is suggested to result from interactions bet ween dislocations and GeAs precipitates. The effects of heating rate, annealing ambient, and implantation dose on both the formation of GeAs precipitates and the removal of dislocations are investigated. A poss ible influence of point defects on precipitate formation is discussed. (C) 1998 American Institute of Physics. [S0021-8979(98)06820-0].